Download 1991 Solar World Congress by S. M. A. Burley, M. Coleman, M. E. Arden PDF

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By S. M. A. Burley, M. Coleman, M. E. Arden

The ISES sun global Congress, held in Denver, Colorado in August 1991 attracted over one thousand individuals from approximately 70 international locations, making it the most important solar power occasion of its style on the planet. As a long-lasting list of that congress, 630 papers are released the following in four volumes of complaints. quantity 1 is devoted to solar power, biofuels and renewable assets. quantity 2 includes papers on lively sun and sun warmth. Passive sunlight, socio-economic and academic points are thought of in quantity three, and at last the plenary classes, and the Farrington Daniels lecture are released in quantity four. 1991 sun international Congress provides the very most modern advances within the usage of different power assets and expertise.

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C •85 £•80 »a -©• •75|•70 375 395 415 435 Oxidation Temp. (°G) Fig. 3. Dependences of Voc, n and B on the oxidation temperature. 05 01 (eV) Fig. 5. Dependence of Voc on *B. 31 If the thickness of oxide layer S is same , the n-value of (100)Si is smaller than that of ( l l l ) S i . According to Eq. (6) *B of (100)Si is higher than that of ( l l l ) S i , which results in higher Voc of (100)Si. CONCLUSION The open circuit voltage of Sn02 or ITO-nSi solar cells varies by manufacturing process and by crystal orientation of Si wafers.

Nlnç in all cases, although the morphology remains unchanged. However, processing of these precursors under fixed selenization conditions (performed by B. Basol at ISET) resulted in different film morphologies (Fig. 3(d,e,f)). CdS/CuInSe2 heterojunction devices fabricated from these precursors exhibit different performance and air annealing behavior (Fig. 4). The results suggest a dependence of the selenization reaction on the precursor microstructure, even though annealing studies reveal that homogenization occurs at 400 °C.

Each alloy system, how ever, exhibits unique deficiencies. In the quaternary iso-electronic alloys, CuIni_y(Ga,Al)ySe2, phase instabilities for Ga contents greater than 50% and Al sensitivity to O2 result in a generally poor space charge region and therefore losses in current generation. Continued optimization and characterization of these alloys will provide a basis for improvements. Introducing the binary ZnSe into the CuInSe2 matrix, on the other hand, may have the opposite effect; the single-action semiconductors generally contain fewer midgap defect states than do their ternary analogs.

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