By Norman G. Einspruch
Includes contributions from a dozen execs from the inner most quarter and academia. Discusses a number of gadget physics themes of specific curiosity to and college researchers in electric engineering, desktop technology, and digital fabrics. Emphasizes actual description, mode
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Additional resources for Advanced MOS Device Physics
Int. Electron Devices Meet, p. 600 (1981). P. K. Ko, Hot-electron effects in MOSFET. Doctoral Thesis, University of California, Berkeley (1982). S. Tarn, P. K. Ko, C. Hu, and R. S. Muller, Correlation between substrate and gate currents in MOSFETs. IEEE Trans. Electron Devices ED-29(11), 1740 (1982). S. Tarn, P. K. Ko, and C. Hu, A lucky-electron model for channel hot-electron injection in MOSFETs. IEEE Trans. Electron Devices ED-31(10), 1116 (1984). F. C. Hsu, P. K. Ko, S. Tarn, R. S. Muller, and C.
However, in normal circuit applications, the depletion-mode transistors are never turned off, and so this does not necessarily present a problem. Short-channel effects in buried-channel P M O S devices are dis cussed in Section III, and in general the same principles can be applied to N M O S devices with appropriate changes in d o p a n t types. III. p-CHANNEL M O S TRANSISTORS In advanced M O S technologies, p-channel transistors are used exclusively in C M O S logic or analog circuits. -channel transistors could be fabricated using aluminum or n-doped polysilicon gates and a uniform, lightly d o p e d substrate.
Appl. Phys. 45, 187 (1974). Y. C. Cheng and E. A. Sullivan, Surf. Sci. 34, 717 (1973). B. Hofflinger, H. Sibber, and G. Zimmer, Model and performance of hot-electron MOS transistors for VLSI. IEEE Trans. Electron Devices ED-26, 513-520 (1979). A. G. Sabnis and J. T. Clemens, Characterization of electron velocity in the inverted (100) Si surface. Tech. —Int. , pp. 18-21 (1979). 36 19. Ping K. Ko S. C. Sun and J. D. Plummer, Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces.